Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation
Xu Hao, Yang Hong, Wang Yan-Rong, Wang Wen-Wu†, , Luo Wei-Chun, Qi Lu-Wei, Li Jun-Feng, Zhao Chao, Chen Da-Peng, Ye Tian-Chun
       

VAF and TAF dependence under different stress conditions.