Temperature- and voltage-dependent trap generation model in high-
k
metal gate MOS device with percolation simulation
Xu Hao
, Yang Hong
, Wang Yan-Rong
, Wang Wen-Wu
†,
, Luo Wei-Chun
, Qi Lu-Wei
, Li Jun-Feng
, Zhao Chao
, Chen Da-Peng
, Ye Tian-Chun
Relation between Weibull slope
β
and
α
.