Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations
Xu Hao, Yang Hong, Luo Wei-Chun, Xu Ye-Feng, Wang Yan-Rong, Tang Bo, Wang Wen-Wu†, , Qi Lu-Wei, Li Jun-Feng, Yan Jiang, Zhu Hui-Long, Zhao Chao, Chen Da-Peng, Ye Tian-Chun
       

TBD and β versus Not/Nit of simulation results.