Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-<italic>k</italic> metal gate NMOSFET with kMC TDDB simulations

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

Xu Hao, Yang Hong, Luo Wei-Chun, Xu Ye-Feng, Wang Yan-Rong, Tang Bo, Wang Wen-Wu^†,, Qi Lu-Wei, Li Jun-Feng, Yan Jiang, Zhu Hui-Long, Zhao Chao, Chen Da-Peng, Ye Tian-Chun

High-k metal gate stacks of NMOSFET under test. The thickness of TiN capping layer is varied for process optimization.