Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures
Duan Xiao-Ling, Zhang Jin-Cheng†, 
, Xiao Ming, Zhao Yi, Ning Jing, Hao Yue
, Xiao Ming, Zhao Yi, Ning Jing, Hao Yue Electric field distributions along the interface of AlGaN/GaN for GTCE-HEMT (red line) and the conventional device (blue line). The dash line is from the source to the drain.
