Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures
Duan Xiao-Ling, Zhang Jin-Cheng†, 
, Xiao Ming, Zhao Yi, Ning Jing, Hao Yue
, Xiao Ming, Zhao Yi, Ning Jing, Hao Yue Variation of breakdown voltage with recess depth.
