Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures
Duan Xiao-Ling, Zhang Jin-Cheng†, 
, Xiao Ming, Zhao Yi, Ning Jing, Hao Yue
, Xiao Ming, Zhao Yi, Ning Jing, Hao Yue Conduction band profiles along the channel of GTCE-HEMT for (a) 100 nm- and (b) 500-nm recess depth with different drain bias voltages.
