Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures
Duan Xiao-Ling, Zhang Jin-Cheng†, , Xiao Ming, Zhao Yi, Ning Jing, Hao Yue
       

(a) Transfer characteristics for different depths, (b) Vth and transconductance characteristic, and (c) subthreshold slope and DIBL of the GTCE-HEMT each as a function of gate recess etching depth.