Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

Duan Xiao-Ling, Zhang Jin-Cheng^†,, Xiao Ming, Zhao Yi, Ning Jing, Hao Yue

Logarithmic electron concentrations in the GTCE-HEMT for (a) off-state condition (V_g = 0 V, V_d = 0 V) and for (b) on-state condition (V_g = 4 V, V_d = 10 V).