Impurity effect on surface states of Bi (111) ultrathin films
Zhu Kai1, 2, Tian Dai1, 2, Wu Lin1, 2, Xu Jianli1, 2, Jin Xiaofeng1, 2, †,
       

Representative RHEED pattern of the Si (111)-7×7 surface (a) and a 5.0-nm Bi (111) films (b). The temperature dependence of the square resistivity ρxx of a 5.0-nm pristine Bi (111) film and with 0.5-ML Cu, Fe, and Co impurities on top is shown in panels (c), (d), and (e), respectively.