Representative RHEED pattern of the Si (111)-7×7 surface (a) and a 5.0-nm Bi (111) films (b). The temperature dependence of the square resistivity ρxx of a 5.0-nm pristine Bi (111) film and with 0.5-ML Cu, Fe, and Co impurities on top is shown in panels (c), (d), and (e), respectively.