Numerical and experimental study of the mesa configuration in high-voltage 4H

Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers

Deng Xiao-Chuan^{1, †,}, Chen Xi-Xi¹, Li Cheng-Zhan², Shen Hua-Jun³, Zhang Jin-Ping¹

Distributions of impact ionization generation rate in SiC PiN rectifiers with mesa angle of (a) 60°, (b) 30°, (c) 10°. The mesa height is fixed to be 3 μm.