Numerical and experimental study of the mesa configuration in high-voltage 4H

Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers

Deng Xiao-Chuan^{1, †,}, Chen Xi-Xi¹, Li Cheng-Zhan², Shen Hua-Jun³, Zhang Jin-Ping¹

Simulated electric field profiles for PiN rectifiers with (a) and without (b) sub-trench at the breakdown (mesa height of 3 μm and mesa angle of 60°).