Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers
Deng Xiao-Chuan1, †, 
, Chen Xi-Xi1, Li Cheng-Zhan2, Shen Hua-Jun3, Zhang Jin-Ping1
, Chen Xi-Xi1, Li Cheng-Zhan2, Shen Hua-Jun3, Zhang Jin-Ping1 Sub-trench depth dependences of reverse blocking characteristic for 4H–SiC PiN rectifiers with and without sub-trench.
