Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers
Deng Xiao-Chuan
1, †,
, Chen Xi-Xi
1
, Li Cheng-Zhan
2
, Shen Hua-Jun
3
, Zhang Jin-Ping
1
Schematic diagram of simulated and fabricated 4H–SiC PiN rectifier.