Numerical and experimental study of the mesa configuration in high-voltage 4H

Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers

Deng Xiao-Chuan^{1, †,}, Chen Xi-Xi¹, Li Cheng-Zhan², Shen Hua-Jun³, Zhang Jin-Ping¹

Plots of breakdown voltage versus JTE dose for different interface charge densities. Symbols represent experimental results, and solid lines refer to simulation curves.