Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers
Deng Xiao-Chuan1, †, , Chen Xi-Xi1, Li Cheng-Zhan2, Shen Hua-Jun3, Zhang Jin-Ping1
       

Plot of leakage current versus reverse voltage of a 4-kV PiN diode with a die size of 6.8 mm2.