Lu Peng-Fei 1, 2, †, , Wu Li-Yuan 1, Yang Yang 1, Wang Wei-Zheng 1, Zhang Chun-Fang 3, Yang Chuang-Hua 4, Su Rui 3, Chen Jun 5
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Partial and differential charge density calculations for the NBOHC-E′ structure. Panel (a) shows the partial charge density for the defect states in the Si1–O1–Si2 plane, panel (b) represents the differential charge density of the NBOHC-E′ structure, panel (c) displays the differential charge density of the plane centered on Si1 with E′, and panel (d) exhibits the optimized fused silica model with the NBOHC-E′ pair defect. |