Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices
Xie Bingqing, Li Bo, Bi Jinshun, Bu Jianhui, Wu Chi, Li Binhong, Han Zhengsheng, Luo Jiajun†,
       

(a) Corrected C–V curve versus temperature; (b) measured oxide capacitance COXm and corrected oxide capacitance COXadj; (c) calculated series resistance Rs versus temperature, from 300 K to 10 K.