Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices
Xie Bingqing, Li Bo, Bi Jinshun, Bu Jianhui, Wu Chi, Li Binhong, Han Zhengsheng, Luo Jiajun†,
       

(a) CGB–V; (b) CGD–V versus temperature (from 300 K to 10 K).