Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices
Xie Bingqing, Li Bo, Bi Jinshun, Bu Jianhui, Wu Chi, Li Binhong, Han Zhengsheng, Luo Jiajun†, 
(a) Drain current versus gate-to-source voltage; (b) transconductance versus gate-to-source, from 300 K to 10 K.
