Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices
Xie Bingqing, Li Bo, Bi Jinshun, Bu Jianhui, Wu Chi, Li Binhong, Han Zhengsheng, Luo Jiajun†,
       

(a) Drain current versus VDS; (b) saturation drain current versus temperature; (c) linear resistance versus temperature, from 300 K to 10 K.