Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices

Xie Bingqing, Li Bo, Bi Jinshun, Bu Jianhui, Wu Chi, Li Binhong, Han Zhengsheng, Luo Jiajun^†,

Calculated and measured V_th, from 300 K to 10 K (a) with complete ionization of N_A; (b) with corrected .