Perfect spin filtering controlled by an electric field in a bilayer graphene junction: Effect of layer-dependent exchange energy

Jatiyanon Kitakorn¹, Tang I-Ming², Soodchomshom Bumned^{1, †,}

Tunneling magnetoresistance (TMR) as a function of electric field-induced gap Δ_E in the case of E = h = 5 meV for (a) U = 5 meV, −20 meV < Δ_E < + 20 meV, (b) U = 0, −54 meV < Δ_E < + 5 meV, (c) U = 2.5 meV, −5 meV < Δ_E < + 5 meV, and (d) U = 5 meV, −5 meV < Δ_E < + 5 meV. The condition with the most stability for TMR=100% under a varying electric field is found at E = h = U.