Depositing aluminum as sacrificial metal to reduce metal

Depositing aluminum as sacrificial metal to reduce metal–graphene contact resistance

Mao Da-cheng, Jin Zhi^†,, Wang Shao-qing, Zhang Da-yong, Shi Jing-yuan, Peng Song-ang, Wang Xuan-yun

(a) Linear I–V characteristics of different channel lengths. (b) Contact resistance derived using TLM at room temperature. (c) Distributions of the contact resistance for the treated and untreated devices.