Thermally induced native defect transform in annealed GaSb

Su Jie^{1, 2}, Liu Tong¹, Liu Jing-Ming¹, Yang Jun¹, Bai Yong-Biao^{1, 2}, Shen Gui-Ying^{1, 2}, Dong Zhi-Yuan¹, Wang Fang-Fang³, Zhao You-Wen^{1, †,}

Near- and mid-IR transmission spectra of undoped GaSb samples at 300 K taken in ambient atmosphere. The dashed line is the FTIR transmission spectrum of the as-grown GaSb sample. The blue and black lines correspond to the GaSb samples annealed at 500 °C and 550 °C, respectively. The spectrum of the sample annealed at 600 °C is almost coincident with that of the sample annealed at 550 °C, and is not shown here.