Thermally induced native defect transform in annealed GaSb
Su Jie1, 2, Liu Tong1, Liu Jing-Ming1, Yang Jun1, Bai Yong-Biao1, 2, Shen Gui-Ying1, 2, Dong Zhi-Yuan1, Wang Fang-Fang3, Zhao You-Wen1, †,
       

The diffusion concentration of Sb atom changed along with the diffusion distance in GaSb sample, where C0 is the diffusion concentration at the surface of the sample, and C is the diffusion concentration at a certain depth in the diffused layer.