Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors
Chen Bi-Juan1, Deng Zheng1, Wang Xian-Cheng1, ‡, , Feng Shao-Min1, Yuan Zhen1, Zhang Si-Jia1, Liu Qing-Qing1, Jin Chang-Qing1, 2, †,
       

(a) Temperature dependence of resistivity ρ(T) for BaFZnAs. The inset shows ln(ρ) versus inverse temperature T−1.