Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors
Chen Bi-Juan1, Deng Zheng1, Wang Xian-Cheng1, ‡, 
, Feng Shao-Min1, Yuan Zhen1, Zhang Si-Jia1, Liu Qing-Qing1, Jin Chang-Qing1, 2, †,
, Feng Shao-Min1, Yuan Zhen1, Zhang Si-Jia1, Liu Qing-Qing1, Jin Chang-Qing1, 2, †, (a) High-pressure Raman spectra of BaFZnAs with the pressure ranging from 0.08 GPa to 21.71 GPa. (b) Pressure dependence of Raman mode shifts for BaFZnAs compound.
