Improving breakdown voltage performance of SOI power device with folded drift region
Li Qi1, Li Hai-Ou2, †, 
, Huang Ping-Jiang2, Xiao Gong-Li3, Yang Nian-Jiong4, ‡,
, Huang Ping-Jiang2, Xiao Gong-Li3, Yang Nian-Jiong4, ‡, Surface temperature distribution with same drain current (the substrate temperature and the drain current are 300 K and 30 mA/mm in the simulation, respectively).
