Improving breakdown voltage performance of SOI power device with folded drift region

Li Qi¹, Li Hai-Ou^{2, †,}, Huang Ping-Jiang², Xiao Gong-Li³, Yang Nian-Jiong^{4, ‡,}

On-resistance as a function of (a) N_d and W; (b) N_d and H; (c) BV and on-resistance as a function of N_d (L_d = 23 μm).