Improving breakdown voltage performance of SOI power device with folded drift region

Li Qi¹, Li Hai-Ou^{2, †,}, Huang Ping-Jiang², Xiao Gong-Li³, Yang Nian-Jiong^{4, ‡,}

(a) Variation of BV versus t_ox; (b) electric fields of the BOX layer (x = 16 μm) at breakdown with different t_ox; (c) variation of breakdown voltage versus t_d.