Improving breakdown voltage performance of SOI power device with folded drift region
Li Qi1, Li Hai-Ou2, †, , Huang Ping-Jiang2, Xiao Gong-Li3, Yang Nian-Jiong4, ‡,
       

(a) Variation of BV with t (length of the N pillar beside the drain) and (b) the vertical electric field distribution under the drain (x = 16 μm).