Improving breakdown voltage performance of SOI power device with folded drift region

Li Qi¹, Li Hai-Ou^{2, †,}, Huang Ping-Jiang², Xiao Gong-Li³, Yang Nian-Jiong^{4, ‡,}

Variation of BV with (a) the highly doped N/P pillars’ concentrations N_p¹, P_p¹, and N_p², and (b) the length of the pillars.