Improving breakdown voltage performance of SOI power device with folded drift region
Li Qi1, Li Hai-Ou2, †, , Huang Ping-Jiang2, Xiao Gong-Li3, Yang Nian-Jiong4, ‡,
       

(a) Dependences of BV on Nd and D; (b) dependences of BV on Nd and W; and (c) dependences of BV on Nd and H.