Improving breakdown voltage performance of SOI power device with folded drift region
Li Qi1, Li Hai-Ou2, †, , Huang Ping-Jiang2, Xiao Gong-Li3, Yang Nian-Jiong4, ‡,
       

Equipotential contours at breakdown for (a) ENDIF IDT LDMOS (607 V), (b) C-LDMOS (221 V), (c) the vertical electric field and potential distribution (x = 16.5 μm) of the three devices (d) hole profile at surface of BOX layer (y = 25 μm) and surface of the oxide trench (x = 9 μm).