Improving breakdown voltage performance of SOI power device with folded drift region
Li Qi1, Li Hai-Ou2, †, 
, Huang Ping-Jiang2, Xiao Gong-Li3, Yang Nian-Jiong4, ‡,
, Huang Ping-Jiang2, Xiao Gong-Li3, Yang Nian-Jiong4, ‡, (a) Schematic cross-section view of the ENDIF IDT LDMOS; (b) schematic of charge distributions.
