Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

Lotfi E^{1, †,}, Rezania H², Arghavaninia B³, Yarmohammadi M⁴

Normalized electrical conductivity σ_xx/σ₀ of biased doped AB stacked bilayer graphene as a function of impurity concentration n_i for different bias voltages V/t_∥ for v_i/t_∥ = 0.3. The normalized temperature is assumed to be k_BT/t_∥ = 0.06.