Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution
Zhang Yu1, 2, †, , Lu Xinmiao2, Wang Guangyi1, 2, Hu Yongcai2, Xu Jiangtao3
       

RTS noise histograms at different temperatures when the density of the oxide trap is set to 4 × 1016 cm−3·eV−1. (a) RTS noise histograms at different temperature when ET − EF > 0; panel (b) shows a partial enlarged detail of panel (a). (c) RTS noise histograms at different temperature when ET − EF < 0; panel (d) shows a partial enlarged detail of panel (c).