Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution
Zhang Yu1, 2, †, 
, Lu Xinmiao2, Wang Guangyi1, 2, Hu Yongcai2, Xu Jiangtao3
, Lu Xinmiao2, Wang Guangyi1, 2, Hu Yongcai2, Xu Jiangtao3 RTS histograms of the quite sample and the noisy sample of the 90-nm device when the oxide trap density is set to 4 × 1016 cm−3·eV−1.
