Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing
Ma Liu-Hong, Han Wei-Hua†, , Wang Hao, Lyu Qi-feng, Zhang Wang, Yang Xiang, Yang Fu-Hua‡,
       

(a) Temperature-dependent SS and the maximum gm. (b) Experimental Vth of JNT as a function of temperature. The applied VDS equals 10 mV.