Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing
Ma Liu-Hong, Han Wei-Hua†, , Wang Hao, Lyu Qi-feng, Zhang Wang, Yang Xiang, Yang Fu-Hua‡,
       

Plot of transconductance gm versus VGS at VDS = 10 mV, with the inset showing the corresponding plot for the device.