Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing
Ma Liu-Hong, Han Wei-Hua†, 
, Wang Hao, Lyu Qi-feng, Zhang Wang, Yang Xiang, Yang Fu-Hua‡,
, Wang Hao, Lyu Qi-feng, Zhang Wang, Yang Xiang, Yang Fu-Hua‡, Measured drain current characteristics at room temperature, showing (a) drain current versus gate voltage for drain voltages of 0.1 V and 1.0 V, and (b) drain current versus drain voltage for different gate voltages.
