Role of vacancy-type defects in magnetism of GaMnN
Xing Hai-Ying1, 2, Chen Yu2, Ji Chen3, Jiang Sheng-Xiang3, Yuan Meng-Yao2, Guo Zhi-Ying2, †, 
, Li Kun2, Cui Ming-Qi2, ‡, , Zhang Guo-Yi3, §,
, Li Kun2, Cui Ming-Qi2, ‡, , Zhang Guo-Yi3, §, Electron density differences for three systems: (a) and (b) GaN:Mn, (c) and (d) GaMnN:VN, and (e) and (f) GaMnN:VGa. In panels (a), (c), and (e), blue and yellow represent the electron density increase and decrease, respectively; in panels (b), (d), and (f), red and blue represent the electron accumulation and depletion, respectively).
