Role of vacancy-type defects in magnetism of GaMnN
Xing Hai-Ying1, 2, Chen Yu2, Ji Chen3, Jiang Sheng-Xiang3, Yuan Meng-Yao2, Guo Zhi-Ying2, †, , Li Kun2, Cui Ming-Qi2, ‡, , Zhang Guo-Yi3, §,
Total and partial densities of states for (a) GaMnN, (b) GaMnN:VN and (c) GaMnN:VGa. The upper half for each panel is for spin-up and the other for spin-down.