(a) Channel magnetoresistance acquired by sweeping the magnetic field along the channel (left axis) and the normalized magnetization curves measured with the magnetic field applied in-plane along the (100) direction of the substrate at 10 K under V_G = + 3 V. (b) Fourier-filtered images of LSMO with V_G = + 3.0 V. The ⊥ and dashed ovals mark the dislocation and estimated areas with high dislocation density, respectively. (c) Channel resistance versus V_G with H = 0 kOe and 5 kOe.^[20]