(a) Schematic of the BFO/LSMO field-effect device. (b) Magnetic coercivity of the LSMO with respect to gate voltage (V_G) at 5.5 K. The arrows show the direction of the pulse sequence. (c) Electric-field control of exchange bias. From top to bottom: the V_G-pulse sequence used for the measurements; the measurements of normalized exchange bias and peak resistance for the gate-pulse sequence obtained in negative and positive remanent magnetization; examples of individual MR curves from the upper and lower resistive states where the exchange-bias values were determined.^[19]