Electrical control of magnetism in oxides
Song Cheng†, , Cui Bin, Peng Jingjing, Mao Haijun, Pan Feng
       

(a) Electronic phase diagram of the LAO/STO interface, obtained through field-effect modulation of the carrier density.[144] The inset shows a schematic view of a field-effect device, showing the source (S), drain (D), longitudinal voltage (V+ and V−), Hall voltage (VH), and gate voltage (G) contacts. (b) Modulation of the magnetoconductance s with gate voltage for an LAO/STO interface.[134] The change from a weakly localized regime (positive Δs) to a weakly anti-localized regime (negative Δs) reveals the increase in strength of the spin-orbit coupling. (c) Magnetoresistance (MR) at Vg ∼ 100 V at different temperatures.[145]