Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip
Wu Li-Shu†, 
, Zhao Yan, Shen Hong-Chang, Zhang You-Tao, Chen Tang-Sheng
, Zhao Yan, Shen Hong-Chang, Zhang You-Tao, Chen Tang-Sheng Displacement vector fields for initial bond experiments at partially cured temperatures of 160 °C (a), 170 °C (b), 180 °C (c), and 190 °C (d), each for 1 h, respectively.
