Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip

Wu Li-Shu^†,, Zhao Yan, Shen Hong-Chang, Zhang You-Tao, Chen Tang-Sheng

I–V characteristic curves of standard GaAs pHEMT and transferred GaAs pHEMT with (a) 1-μm BCB, (b) 2-μm BCB, (c) 3-μm BCB, and (d) 4-μm BCB, respectively.