Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

Zhu Qing^{1, 2}, Ma Xiao-Hua^{1, 2, †,}, Chen Wei-Wei^{1, 2}, Hou Bin^{1, 2}, Zhu Jie-Jie^{1, 2}, Zhang Meng^{1, 2}, Chen Li-Xiang^{1, 2}, Cao Yan-Rong³, Hao Yue²

DLTS spectra measured each as a function of filling pulse height with a rate window e = 133 s⁻¹ when pulse width is 0.1 ms. (a) V_r is −3 V and (b) V_r is −2.7 V.